| 摘要 |
The sensor can be applied in the control and measuring equipment engineering, the instrumentation engineering industry, high-temperature electronics, contactless automation and in military engineering. It has removed parasite non-equipotential voltage by balancing the potentials inside the substrate and attaining their balance in their two output contacts, which guarantees stability of the neuter and improved accuracy in the process of measuring the magnetic field. The Hall-effect sensor having a parallel axis of sensitivity comprises a semi-conductor wafer (1) of mixed type of conductivity, on one side of which, at some distance between, two identical first and second rectangular, parallel to their long sides end ohmic contact (2 and 3)are formed. The opposite side of the wafer (1) is a third ohmic contact (4). One of the terminals of the current source (8) is connected to the third ohmic contact (4). The external magnetic field is applied perpendicularly to the cross section of the wafer (1), the output being the two end ohmic contacts. At equal distance from the end ohmic contacts (2 and 3) are formed two more rectangular and identical internal ohmic contacts (5 and 6). They are positioned in parallel with their long sides to the end ohmic contacts, the two internal ohmic contacts being directly connected to the two outputs of a trimmer (7), the middle output of which is coupled to the other terminal of the current source (8). 1 claim, 1 figure
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