| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing rate selectivity enhancer which is capable of stably improving the polishing speed ratio of a silicon nitride to a silicon oxide film at a low cost, a polishing liquid composition containing the polishing rate selectivity enhancer, a method of improving a polishing rate selection ratio between a silicon nitride film and a silicon oxide film using a stationary abrasive particle polishing tool equipped with a polishing unit containing the polishing liquid composition, abrasive particles, and resin; and to provide a semicondcutor substrate polishing method using the polishing liquid composition and the stationary abrasive particle tool a method of manufacturing a semiconudctor manufacturing device by the use of the polishing method, and a polishing device using the above polishing method. <P>SOLUTION: The polishing rate selectivity enhancer is contained in the polishing liquid composition used for the stationary abrasive particle polishing tool with the polishing unit including the abrasive particles and the resin. The polishing rate selectivity enhancer is an organic cation compound and capable of improving the polishing speed ratio of a silicon oxide film to a silicon nitride film, a polishing liquid composition is used for the stationary abrasive particle polishing tool equipped with a polishing unit containing abrasive particles and resin and capable of improving the polishing speed ratio of the silicon oxide film to the silicon nitride film, and the polishing liquid composition contains the polishing rate selectivity enhancer. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
