| 摘要 |
PROBLEM TO BE SOLVED: To solve in a single wafer processor the problem wherein, in processing a semiconductor substrate at a high temperature using a chemical solution, the processing chemical solution in the surface of the substrate has a temperature distribution, which gives different etching rates to the substrate, that is, reduces the reaction uniformity of the chemical solution in the substrate surface. SOLUTION: A heater 9 of a resistance heating type is provided around the outer periphery of a processing chamber 3 to heat an atmosphere within the chamber 3 and to increase the temperature of the entire semiconductor substrate 1 to a level nearly corresponding to the temperature (HF: 50°C) of the chemical solution. Thereafter, the chemical solution is discharged from a chemical solution nozzle 4 onto the substrate 1 which in turn is rotated at a speed of 500 rpm or more. When the temperature of the entire substrate 1 is increased to a level corresponding nearly to the temperature of the chemical solution before treatment of the chemical solution in this way, the reduction of the chemical solution temperature on the substrate during the chemical solution treatment can be suppressed, variations in the solution temperature in the surface of the substrate can be avoided, and the reaction uniformity with the chemical solution in the substrate surface can be increased. COPYRIGHT: (C)2004,JPO&NCIPI
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