Process and device for producing a layer of tantalum pentoxide on a carrier material, in particular titanium nitride, and integrated circuit incorporating a layer of tantalum pentoxide

摘要

Carrier material (PL) is heated (MCH) to a heating temperature of between 200° C. and 400° C. and a gas mixture (MG) including tert-butyliminotris (diethylamino) tantalum (t-BuN=Ta(NEt2)3) is circulated in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material. The partial pressure of the tert-butyliminotris (diethylamino) tantalum is preferably greater than or equal to 25 mTorr.