| 摘要 |
PROBLEM TO BE SOLVED: To highly accurately estimate the electric characteristic of MOSFET having a desired size based on the real size (gate length/ gate width) of MOSFET. SOLUTION: A circuit simulator, etc. are provided which perform simulation of electric characteristic of a circuit including a plurality of transistors. The circuit simulator is provided with a storage device storing a pattern arranging in lattice a model constructed based on the size and position of the plurality of transistors and a measuring data measuring the electric characteristic of a part of transistors, and a processing part which specifies other transistors in the pattern based the interpolation rule and obtains the interpolated data interpolated the electric characteristic of other transistors based on the measuring data. The processing part specifies an arbitrary position in the pattern, and interpolates and outputs the data of the electric characteristic in the position based on the measuring data and/or interpolated data of four transistors around the position. COPYRIGHT: (C)2004,JPO&NCIPI
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