发明名称 |
Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
摘要 |
A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*10<17 >cm<-3 >to 7.2*10<17 >cm<-3 >and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.
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申请公布号 |
US2004192015(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040809070 |
申请日期 |
2004.03.25 |
申请人 |
SILTRONIC AG |
发明人 |
AMMON WILFRIED VON;VIRBULIS JANIS;WEBER MARTIN;WETZEL THOMAS;SCHMIDT HERBERT |
分类号 |
C30B29/06;C30B15/00;C30B15/14;C30B15/22;(IPC1-7):H01L21/30;H01L21/46;C30B1/00;H01L21/20;H01L21/36 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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