| 发明名称 |
Increasing stress-enhanced drive current in a MOS transistor |
| 摘要 |
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
|
| 申请公布号 |
US2004188670(A1) |
申请公布日期 |
2004.09.30 |
| 申请号 |
US20030404880 |
申请日期 |
2003.03.31 |
| 申请人 |
SHAHEED M. REAZ;HOFFMANN THOMAS;ARMSTRONG MARK;AUTH CHRISTOPHER P. |
发明人 |
SHAHEED M. REAZ;HOFFMANN THOMAS;ARMSTRONG MARK;AUTH CHRISTOPHER P. |
| 分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
