MEMORY ELEMENT AND STORAGE DEVICE USING THIS

摘要

A memory element in/from which information can be easily recorded/read and which is produced by a relatively simple manufacturing method and a storage device using this are disclosed. A memory element (10) comprises a first electrode (2), a second electrode (5) and an amorphous film (4) sandwiched between the first and second electrodes (2, 5). At least the electrode (5) contains Ag or Cu, and the amorphous film (4) is composed of Ge and one or more elements selected from S, Se, Te, and Sb. A storage device is composed of many such memory elements (10) and wirings connected to the first and second electrodes (2, 5) of each memory element (10).