| 发明名称 |
Method for forming a metal oxide film |
| 摘要 |
A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.
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| 申请公布号 |
US2004192036(A1) |
申请公布日期 |
2004.09.30 |
| 申请号 |
US20040808193 |
申请日期 |
2004.03.24 |
| 申请人 |
KOYANAGI KENICHI;SAKUMA HIROSHI |
发明人 |
KOYANAGI KENICHI;SAKUMA HIROSHI |
| 分类号 |
C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476;H01L21/443 |
主分类号 |
C23C16/40 |
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