THIN FILM TRANSISTOR ARRAY PANEL

摘要

A thin film transistor array panel is provided, which includes: a substrate (110) including a plurality of pixel areas; a semiconductor layer (140, 142) formed on the substrate (110) and including a plurality of pairs of first (140) and second (142) semiconductor portions in respective pixel areas; a first insulating layer (130) formed on the semiconductor layer; a gate wire (121-124); formed on the first insulating layer; a second insulating layer (180) formed on the gate wire (121-124); a data wire (171, 172) formed on the second insulating layer (180); a third insulating layer (185) formed on the data wire (171, 172) a pixel electrode (192) formed on the third insulating layer (185) and connected to the data wire (171, 172), wherein width and length of at least one of the first (140) and the second (142) semiconductor portions vary between at least two pixel areas.