| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a method for removing residue after cleaning unwanted byproducts discharged in plasma CVD in which removing efficiency of residue is enhanced as compared with a conventional method while shortening the time required for removal. <P>SOLUTION: The cleaning method of a system for processing a long substrate while carrying it through a processing chamber comprises a step of etching the interior of the processing chamber using a substance containing chlorine atoms, and a step of carrying a long substrate, having a surface for adsorbing chlorine atoms, chlorine molecules, chlorine ions or chlorine compounds on at least one side, through the processing chamber and adsorbing at least one of the chlorine atoms, chlorine molecules, chlorine ions and chlorine compounds. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
