| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage semiconductor device containing magneto resistance elements in which the performance of the magneto resistance elements is hard to be deteriorated during a manufacturing process. SOLUTION: The magnetic storage semiconductor device is formed on a semiconductor substrate 1, and has at least one magnetoresistance-effect element 50, transistor elements 3a, 3b for controlling the magnetoresistance-effect element, metal interconnect layers 11, 34, 53, 63 for operating these elements, and interlayer isolation films for arranging the magnetoresistance-effect element, the transistor elements, and the metal interconnect layers respectively in layer forms, wherein the magnetoresistance-effect element is coated with a protective film 44 which is different from the interlayer isolation film 52. COPYRIGHT: (C)2004,JPO&NCIPI
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