发明名称 METHOD FOR MANUFACTURING CONNECTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To manufacture a connector substrate made of a semiconductor substrate, where a passive element, such as a high dielectric capacitor, is incorporated and a conductor is filled into a through hole without generating any inconveniences. SOLUTION: A method for manufacturing connector substrates comprises a process for forming the passive element Q on a first insulating film 12 on the semiconductor substrate 10, a process for forming a resist film 23 having an opening 23a at a hole formation section, a process for forming a hole 11 having an overhang section 12x in the first insulating film 12 by etching the first insulating film 12 and the semiconductor substrate 10 through the opening 23a of the resist film 23, a process for removing the overhang section 12x in the first insulating film 12 with the resist film 23 as a mask, a process for removing the resist film 23, a process for selectively forming a second insulating film on the inner surface of the hole 11, a process for filling a conductor into the hole 11, and a process for exposing one portion of the semiconductor by trimming the semiconductor substrate 10 from the rear side. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004273622(A) 申请公布日期 2004.09.30
申请号 JP20030060070 申请日期 2003.03.06
申请人 FUJITSU LTD 发明人 OMOTE KOJI;MIZUKOSHI MASATAKA;TANIGUCHI OSAMU
分类号 H01L23/12;H01L23/32;(IPC1-7):H01L23/12 主分类号 H01L23/12
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