| 摘要 |
PROBLEM TO BE SOLVED: To provide a duplicate sidewall structured semiconductor device which prevents surely erosion and deformation due to consecutive hydrofluoric acid cleaning treatment. SOLUTION: The semiconductor device is provided with a semiconductor substrate, a gate electrode located on the substrate through a gate insulating film, and a duplicate sidewall covering a sidewall of the gate electrode. The duplicate sidewall is constituted of a first sidewall which is located on the sidewall of the gate electrode and lower than the height of the gate electrode, and a second sidewall of hydrofluoric acid-proof nature which covers continuously the whole surface of the first sidewall and an upper sidewall of the gate electrode protruding from the first sidewall. COPYRIGHT: (C)2004,JPO&NCIPI
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