METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for improving productivity by reducing costs as to an electron beam irradiation method which is one of methods for forming carrier traps on a monocrystal semiconductor layer in manufacturing processes of semiconductor wafers for high-speed recovery diodes. SOLUTION: The method capable of irradiating semiconductor wafers with ten times of electron beams in conventional irradiation time by irradiating two or more laminated semiconductor wafers with electron beams from the surface side of the uppermost semiconductor wafer or the rear face of the lowermost semiconductor wafer, and improving a dose distribution characteristic in the depth direction of a sample to be irradiated, is obtained. COPYRIGHT: (C)2004,JPO&NCIPI