发明名称 METHOD FOR FORMING PRECOATING LAYER AND METHOD FOR FORMING FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a precoating layer in which the generation of particles can be suppressed in a relatively short time and to provide a method for forming a film. SOLUTION: In a processing apparatus which forms a metal-containing film on the surface of a workpiece W placed on a placing base 16 in a processing container 4 which can be evacuated, when a precoat layer 28 is formed on the placing base, the precoat layer made of a metal-containing nitride film is formed on the surface of the placing base by one time of thermal CVD film formation process while a predetermined treating gas is made to flow in the processing container, and a metal-containing nitride film is formed on the surface of the workpiece. Thus, the generation of the particles is remarkably suppressed. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004273648(A) 申请公布日期 2004.09.30
申请号 JP20030060669 申请日期 2003.03.06
申请人 TOKYO ELECTRON LTD 发明人 WAKABAYASHI SATORU
分类号 C23C16/34;H01L21/285;(IPC1-7):H01L21/285 主分类号 C23C16/34
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