发明名称 |
Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor |
摘要 |
Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.
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申请公布号 |
US2004192048(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040821944 |
申请日期 |
2004.04.12 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
HAYASHIDA HIDEKI;ITO TAIZO;SAKAGUCHI YASUYUKI |
分类号 |
C01C1/00;C01C1/02;C23C16/30;C23C16/44;C23C16/448;C30B25/02;(IPC1-7):C30B1/00;H01L21/20;H01L21/36;H01L21/302;H01L21/461 |
主分类号 |
C01C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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