发明名称 Semiconductor device and method for manufacturing the same
摘要 An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.
申请公布号 US2004188688(A1) 申请公布日期 2004.09.30
申请号 US20040808343 申请日期 2004.03.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MURANAKA KOJI
分类号 G02F1/1333;G02F1/1343;H01L21/312;H01L21/318;H01L21/77;H01L21/84;H01L27/08;H01L27/12;H01L29/786;(IPC1-7):H01L35/24;H01L29/40 主分类号 G02F1/1333
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