| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize high-speed writing and erasing by using a NAND type memory cell unit suited to high integration, and to provide a highly reliable nonvolatile semiconductor memory device. <P>SOLUTION: A memory cell serial part 2 is formed by serially connecting a plurality of memory cells 1 constituted by connecting a cell transistor Tij formed on a semiconductor substrate and a variable resistive element Rij made of an oxide of a perovskite structure containing manganese and changed in resistance value by applying a voltage between the source/drain terminals of the cell transistors Tij, and a plurality of memory cell blocks 3 constituted by disposing a selection transistor Si in at least one end of the memory cell serial part 2 are arranged to constitute a memory cell array. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
