发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 PROBLEM TO BE SOLVED: To increase a capacity per unit area of a capacitance and to reduce the size of a die. SOLUTION: A capacitance 1-1 includes a lower electrode layer 61, and an intermediate electrode layer 62 formed with a via hole 62A for retrieving an electrode. A capacitance 1-2 includes an intermediate electrode layer 62 and an upper electrode layer 63 formed with a via hole 63A. That is, the intermediate electrode layer 62 is used commonly for one side layer of the capacitance 1-1 and for one side layer of the capacitance 1-2. Thus, the capacitances 1-1 and 1-2 can be constituted of three-layer metal layers. Since intermediate electrode layers 62-1, 62-2 are connected to a first electrode line, and the lower electrode layer 61 and the upper electrode layer 63 are connected to a second electrode line; a capacity of substantially twice as large as that of the capacitance formed of conventional two layers can be realized. This can be applied to a semiconductor device. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004273652(A) 申请公布日期 2004.09.30
申请号 JP20030060834 申请日期 2003.03.07
申请人 SONY ERICSSON MOBILECOMMUNICATIONS JAPAN INC 发明人 HINO YASUSHI
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L21/822 主分类号 H01L27/04
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