| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device provided by a high withstand voltage vertical power MOSFET structure having an n-buffer layer requiring high temperature heat treatment, on the back side opposite to the MOSFET structure forming surface capable of improving a good item rate of a forward withstand voltage to enhance a production efficiency by especially decreasing a defective forward withstand voltage of not more than 100 V. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming a thermally-oxidized film on one main surface of the n-conductivity type semiconductor substrate, introducing an ion implantation of an n-conductivity type impurity on the other main surface, forming n<SP>+</SP>buffer layer by diffusing the impurity by the heat treatment of not less than 1100°C, patterning the thermally-oxidized film on one main surface, and forming the MOSFET structure on one main surface conducted after that. The patterning on the thermally-oxidized film on one main surface is processed after the introduction process by the n-conductivity type impurity ion implantation to the other main surface. COPYRIGHT: (C)2004,JPO&NCIPI
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