| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that group 7B atoms or compounds containing them remain in a processing chamber while sticking to the inner wall face or the structural member thereof during cleaning process of the processing chamber, and taken into a semiconductor film under deposition in a subsequent process, i.e. a plasma CVD process. SOLUTION: In the cleaning method of a processing system for removing by-products, principally polysilane, produced in the processing chamber of a plasma CVD system, a negative voltage is applied to the first electrode which supplies power to the processing system and a negative potential is brought thereto. Cleaning is performed by introducing gas containing group 7B elements without causing a plasma. COPYRIGHT: (C)2004,JPO&NCIPI
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