| 摘要 |
PROBLEM TO BE SOLVED: To synthesize a thin film ferroelectric substance wherein any one or multiple of (200), (206), (111), (220) crystallographic axes, which are favorable to strong dielectric polarization property, is grown preferentially especially, by growing Bi layered structure ferroelectric compound polycrystalline substance by using the chemical solution depositing method. SOLUTION: In the method of manufacturing a Bi layered structure ferroelectric thin film, the Bi layered structure ferroelectric thin film is provided with a thin film expressed with composition of Bi<SB>4-X</SB>Pr<SB>X</SB>Ti<SB>3</SB>O<SB>12</SB>(X=0.0-1.0) on a substrate on which an electrode layer of Ir is formed. Compound alkoxide solution of bismuth, praseodymium and titanium is applied onto the substrate on which the electrode layer of Ir is formed, and the substrate is heat-treated in the atmosphere or oxygen air current. COPYRIGHT: (C)2004,JPO&NCIPI
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