发明名称 |
UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing |
摘要 |
A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. In one embodiment, the device includes a substantially UV-opaque sub-layer of a contact cap layer or a substantially UV-opaque contact cap layer.
|
申请公布号 |
US2004191989(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040818112 |
申请日期 |
2004.04.05 |
申请人 |
NGO MINH V.;KAMAL TAZRIEN;RAMSBEY MARK T.;HALLIYAL ARVIND;PARK JAEYONG;CHENG NING;ERHARDT JEFF P.;FERGUSON CLARENCE B.;SHIELDS JEFFREY A.;HUI ANGELA T.;HUERTAS ROBERT A.;GOTTIPATI TYAGAMOHAN |
发明人 |
NGO MINH V.;KAMAL TAZRIEN;RAMSBEY MARK T.;HALLIYAL ARVIND;PARK JAEYONG;CHENG NING;ERHARDT JEFF P.;FERGUSON CLARENCE B.;SHIELDS JEFFREY A.;HUI ANGELA T.;HUERTAS ROBERT A.;GOTTIPATI TYAGAMOHAN |
分类号 |
H01L21/28;H01L21/336;H01L23/552;H01L27/115;H01L29/792;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|