FBAR mass loading process using selective dry etching

摘要

A method and apparatus is presented. The method produces a Film Bulk Acoustic Resonator (FBAR) structure. A piezoelectric layer is provided and a series of manufacturing steps are performed to deposit a thin mass-load layer above the piezoelectric layer. Further, an electrode material is deposited on the thin mass-load layer after portions of the thin mass-load layer have been removed. The electrode material includes a non-mass-loaded region positioned above the piezoelectric layer and a mass-loaded region positioned above the mass-load layer.