| 摘要 |
A semiconductor memory device includes a first bit line and a second bit line to which data read from first and second memory cells are supplied, respectively, when a word line is activated. A first dummy bit line is provided between the first and second bit lines without interposing any other bit line therebetween and fixed to the ground potential. A first and second sense amplifier amplify potentials on the first and second bit lines, respectively. A connection control section controls so that write data is supplied to the first bit line or second bit line after the word line is activated and before the first and second sense amplifiers operate.
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