| 摘要 |
<p>A wafer-retaining carrier (1) characterized by having, in addition to wafer-holding holes (2) for receiving and retaining wafers, abrasive pass-through holes (3, 4) through which abrasive passes through, the area of the abrasive pass-through holes accounting for 15% or more of the area of a main surface of the carrier. Preferably, the area of the abrasive pass-through holes accounts for 30% or less of the main surface area and the circular abrasive pass-through holes each having a diameter of 5 to 30 mm are arranged over the whole carrier in a concentric or gridded form. The structure above provides a technique where, when grinding is carried out using hard abrasive cloth in a double side-grinding apparatus, particularly, even in a double side-grinding apparatus having a carrier that circularly moves without rotation on its axis, wafers are finished to a high level of flatness without a tapered shape, drips at the outer periphery, etc. This can be achieved without requiring the apparatus to have major improvement.</p> |
