| 摘要 |
A NONVOLATILE MEMORY CELL (20, 40, 50, 60, 70) INCLUDES A SUBSTRATE (21, 100), A DIODE (22), A FIRST CONDUCTIVE LINE (12, 23), A MAGNETIC TUNNEL JUNCTION DEVICE (25), A BY-PASS CONDUCTOR (29) AND A SECOND CONDUCTIVE LINE (13, 27). THE DIODE IS FORMED IN THE SUBSTRATE AND INCLUDES AN N-TYPE REGION (22A) AND A P-TYPE REGION (22B). THE FIRST CONDUCTIVE LINE IS FORMED ON THE SUBSTRATE AND IS ELECTRICALLY CONNECTED TO THE N-TYPE REGION OF THE DIODE. THE MAGNETIC TUNNEL JUNCTION DEVICE IS FORMED ON THE FIRST CONDUCTIVE LINE. THE BY-PASSCONDUCTOR ELECTRICALLY CONNECTS THE P-TYPE REGION OF THE DIODE TO THE MAGNETIC TUNNEL JUNCTION DEVICE. THE SECOND CONDUCTIVE LINE IS FORMED ON AND IS ELECTRICALLY CONNECTED TO THE MAGNETIC TUNNEL JUNCTION DEVICE.
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