| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a developing method for photoresist film which can not only shorten the process time but also can improve the wavelength area selection ratio to enable the formation of a photoresist pattern of a sharp shape, a manufacturing method for a semiconductor device using the developing method, and a developer suitable for excuting the developing method. <P>SOLUTION: The developing method for photoresist film 3 includes a potoresist film forming process of forming a photoresist film 3 on a board 2, an exposure process of exposing the photoresist film 3 to light, and a developing process of developing the exposed photoresist film 3 with a developing solution 7. During the developing process, the photoresist film 3 is irradiated with irradiation light (infrared) having the wavelength area that makes soluble parts dissolving into the developing solution 7 absorb the irradiation light selectively in comparison with insoluble parts not dissolving into the solution 7 on the exposed photoresist film 3. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
