| 摘要 |
PROBLEM TO BE SOLVED: To drastically improve the yield of compound semiconductor single crystals by controlling the shape of a solid-liquid interface to a shape projected toward the melt side with good reproducibility in the growth initial stage from the seeding part up to a constant diameter part in the growth by an LEC method. SOLUTION: In the method for manufacturing the compound semiconductor single crystal by the LEC method, comprising accommodating a GaAs melt 6 and a boron trioxide melt 4 as a liquid encapsulating agent in a crucible accommodated in a high pressure vessel filled with an inert gas and heated, and growing the compound semiconductor single crystal 3 by relatively moving the seed crystal 2 and a PBN crucible 7 while bringing a seed crystal 2 attached to a pulling shaft 1 into contact with the GaAs melt 6, the number of rotation of the pulling shaft 1 in the diameter increasing part 32 from the seeding part 31 up to the constant diameter part 33 and in the initial stage of the constant diameter part 33 is made lower than the subsequent number of rotation. COPYRIGHT: (C)2004,JPO&NCIPI
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