| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of gate wiring through highly accurate formation of a fine gate electrode. SOLUTION: A gate insulating film 2 is formed on a substrate 1, and moreover electrode structuring films 3, 4, 5, 6 forming the gate electrode are sequentially formed. A silicon nitride film 7 and a second polysilicon film 8 are formed over a metal film 6, and a resist pattern 9 is also formed thereon. The second polysilicon film 8 is patterned using the resist pattern 9 as a mask, and the silicon nitride film 7 and the electrode structuring films are patterned using the patterned second polysilicon film 8 as a mask. An interlayer insulating film 11 is formed on the entire surface of the substrate 1, and contact holes 12 are also formed within the interlayer insulating film 11. After a polysilicon film 13 is formed inside the contact hole 12, a polysilicon plug 13a is formed with CMP using the silicon nitride film 7 as a stopper film. COPYRIGHT: (C)2004,JPO&NCIPI
|
