| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film equipment capable of forming a stable thin film. SOLUTION: In the thin film equipment, a flow regulating plate 7 which is composed of transparent silica glass and in which a mass of micropores 6 which supply gas to a semiconductor substrate 11 are arranged in parallel multiple sequence is arranged in a reactor 1. Water-cooled pipes 10 composed of transparent silica glass are welded to an upper surface of the flow regulating plate so as to sew between the respective sequences of the micropores. Since rise in temperature of the flow regulating plate 7 composed of transparent silica glass can be restrained, smearing of the flow regulating plate 7 which is to be caused by sludge is prevented, observation of the semiconductor substrate 11 through the flow regulating plate between the water-cooled pipes 10 and direct temperature measurement with an infrared ray radiation thermometer become possible, and exact control of temperature becomes possible. Further, stable thin film formation is enabled. COPYRIGHT: (C)2004,JPO&NCIPI
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