| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method which reduces to the utmost an influence of time required for a temperature adjusting process on decrease of throughput, and to provide a substrate processing apparatus which achieves temperature control accurately in a process unit for conducting a liquid process to the substrate. SOLUTION: Each of heat processing unit portions G3 to G5 with 10 steps and each of coating processing unit portions G1 and G2 with 5 steps are arranged at the periphery of a first main wafer delivering portion A1 and a second main wafer delivering portion A2, and a wafer W is transported while temperature-adjusting the wafer W by a temperature-adjusting and transporting apparatus C in the heat processing unit portions G3 to G5. The influence of the time required for the temperature adjusting process of the substrate on the decrease of the throughput is reduced to the utmost thereby. COPYRIGHT: (C)2004,JPO&NCIPI
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