METHOD OF FORMING HIGH PERFORMANCE CMOS DEVICE WITH REDUCED COST

摘要

PROBLEM TO BE SOLVED: To provide a method of reducing a working cost of a CMOS device by reducing the number of photolithographic masking processes. SOLUTION: The method comprises the steps of: forming an L-shaped silicon oxide spacer configured by a vertical direction part 4b, a thick horizontal part 4b, and a thin horizontal part 4c at a side of a gate structure 3; forming a shield 6 in a PMOS region 40 of the CMOS device and then forming a P-type halo region 7 at the top of an NMOS region 30 by carrying out an injection treatment; forming an N-type LDD region 8 under the thick horizontal spacer part; forming a heavily doped deep N-type source / drain region 9 under a thin horizontal spacer part; forming a photoresist 15 on a specific CMOS region and then forming a composite insulator spacer 14b at a side of the gate structure which is not coated with the photoresist 15; and subsequently forming a metal silicide 16 on the gate structure 3 and the source / drain region 9. COPYRIGHT: (C)2004,JPO&NCIPI