发明名称 Method of reducing trench aspect ratio
摘要 A method of reducing trench aspect ratio. A trench is formed in a substrate. Using HDP-CVD, a conformal first oxide layer is formed on a surface of the trench. A conformal first nitride layer is formed on the first oxide layer. Part of the first nitride layer is removed to cause the first nitride layer to be lower than a top surface of the substrate. Using a BOE solution, the first nitride layer and part of the first oxide layer are removed to leave a remaining first oxide layer on the lower portion of the surface of the trench. Thus, the trench aspect ratio is reduced.
申请公布号 US2004192010(A1) 申请公布日期 2004.09.30
申请号 US20030727730 申请日期 2003.12.04
申请人 WU CHANG-RONG;WU SENG-HSIUNG;CHEN YI-NAN 发明人 WU CHANG-RONG;WU SENG-HSIUNG;CHEN YI-NAN
分类号 H01L21/311;H01L21/314;H01L21/316;H01L21/318;H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/311
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