发明名称 |
Method of reducing trench aspect ratio |
摘要 |
A method of reducing trench aspect ratio. A trench is formed in a substrate. Using HDP-CVD, a conformal first oxide layer is formed on a surface of the trench. A conformal first nitride layer is formed on the first oxide layer. Part of the first nitride layer is removed to cause the first nitride layer to be lower than a top surface of the substrate. Using a BOE solution, the first nitride layer and part of the first oxide layer are removed to leave a remaining first oxide layer on the lower portion of the surface of the trench. Thus, the trench aspect ratio is reduced.
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申请公布号 |
US2004192010(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20030727730 |
申请日期 |
2003.12.04 |
申请人 |
WU CHANG-RONG;WU SENG-HSIUNG;CHEN YI-NAN |
发明人 |
WU CHANG-RONG;WU SENG-HSIUNG;CHEN YI-NAN |
分类号 |
H01L21/311;H01L21/314;H01L21/316;H01L21/318;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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