Word-line voltage generator

摘要

A programmable memory circuit includes a memory array having a plurality of floating gate memory cells disposed in a first and second row and at least a first and second column and a reference circuit for providing a word line voltage to the memory array for programming selected memory cells from a selected one of the first and second rows. The word line voltage is dependent at least in part upon a bit line reference voltage and upon a threshold voltage of a reference floating gate cell associated with the selected one of the first and second rows.