| 摘要 |
A digital Digital magnetic memory cell device for read and/or write operations, having includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The device includes comprising an AAF layer composite and at least one reference layer. The the AAF layer composite h has E comprising two magnetic layers, and the reference layer system includes comprising at least one antiferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite. The in which case the magnetic layer is (8) arranged remote from the antiferromagnetic layer e and has a uniaxial anisotropy pointing in a first direction. The , and in which case the magnetization of the antiferromagnetic layer (10), is oriented in a manner pointing in a second direction. The ,the anisotropy direction of the magnetic layer (8) and the magnetization direction of the antiferromagnetic layer are (10) being at an angle (alpha) with respect to one another.
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