发明名称 |
Method for Manufacturing Buried Insulating Layer Type Single Crystal Silicon Carbide Substrate and Manufacturing Device for the Same |
摘要 |
Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit. |
申请公布号 |
US2004191966(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040708593 |
申请日期 |
2004.03.12 |
申请人 |
OSAKA PREFECTURE,;HOSIDEN CORPORATION |
发明人 |
IZUMI KATSUTOSHI;NAKAO MOTOI;OHBAYASHI YOSHIAKI;MINE KEIJI;HIRAI SEISAKU;JOBE FUMIHIKO;TANAKA TOMOYUKI |
分类号 |
C30B29/36;H01L21/02;H01L21/04;H01L21/20;H01L21/205;H01L21/76;H01L21/762;H01L27/12;(IPC1-7):H01L21/336;H05H1/46;C30B1/00;H01L21/36;H01L21/00;H01L21/84;H05H1/30 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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