METHODS OF FORMING SEMICONDUCTOR MESA STRUCTURES INCLUDING SELF-ALIGNED CONTACT LAYERS AND RELATED DEVICES
摘要
A method of forming a semiconductor device may include forming a semiconductor layer on a substrate, and forming a contact layer on the semiconductor layer opposite the substrate. After forming the semiconductor layer and the contact layer, the contact layer and the semiconductor layer may be patterned such that the semiconductor layer includes a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate and so that the patterned contact layer is on the mesa surface. Related structures and devices are also discussed.
申请公布号
WO2004059751(A3)
申请公布日期
2004.09.30
申请号
WO2003US40379
申请日期
2003.12.18
申请人
CREE, INC.;HABERERN, KEVIN, W.;SHERRICK, SHEILA;SHEPPARD, SCOTT, T.
发明人
HABERERN, KEVIN, W.;SHERRICK, SHEILA;SHEPPARD, SCOTT, T.