发明名称 |
Rectangular Nitride Compound Semiconductor Wafer with Obverse/Reverse Discriminative Marks |
摘要 |
<p>A mirror-polished obverse surface and a roughened reverse surface of the conventional GaN wafers have been discriminated by difference of roughness on the surfaces with human eyesight. The difference of the surfaces is rather ambiguous. Cracks/breaks and distortion of the wafers have been likely to occur because the roughness of the reverse surface is apt to bring fine particles. To discern an obverse from a reverse without making use of the difference of the surface roughness, the present invention provides an obverse/reverse discriminative rectangular nitride semiconductor wafer having a longer slanting edge and a shorter slanting edge at obversely-clockwise neighboring comers, or having an asymmetric slanting edge at a comer, or having asymmetrically bevelled parts or having discriminating characters marked by laser. The present invention can make the reverse surface mirror-polished and smooth, so that particles on the reverse surface and distortion, cracks or breaks of the wafer decrease.</p> |
申请公布号 |
EP1463115(A2) |
申请公布日期 |
2004.09.29 |
申请号 |
EP20030024441 |
申请日期 |
2003.10.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAYAMA, MASAHIRO;HIRANO, TETSUYA |
分类号 |
C30B29/38;C30B33/00;H01L21/02;H01L21/304;H01L23/544;H01S5/30;(IPC1-7):H01L23/544 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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