发明名称 |
Method of forming airbridged metallization for integrated circuit fabrication |
摘要 |
<p>A method for forming an airbridge for interconnecting metal contacts on an integrated circuit. The airbridge is formed by initially patterning a support photoresist between the metal contacts to be interconnected, over the metal contact to be crossed. The pattern support photoresist is flood exposed with UV light and subsequently baked at a relatively high temperature to cause the support photoresist to flow into a generally spherical shape. The airbridged metal lines are patterned over the spherically shaped support photoresist. Excess metallization is lifted off the support photoresist and the photoresist used to pattern the airbridge is removed, forming an airbridge with curvature along both its width and length.</p> |
申请公布号 |
EP0818816(B1) |
申请公布日期 |
2004.09.29 |
申请号 |
EP19970111066 |
申请日期 |
1997.07.02 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
LAMMERT, MICHAEL |
分类号 |
H01L21/3205;H01L21/768;H01L23/522;H05K3/46;(IPC1-7):H01L21/768;H01L23/482 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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