PHOTODIODE

摘要

A photodiode has an optical absorption layer composed of a depleted first semiconductor optical absorption layer with a layer width WD and a p-type neutral second semiconductor optical absorption layer with a layer width WA. The ratio between WA and WD is set such that the total carrier transit time tau tot becomes minimum in the optical absorption layer. The photodiode can further include a depleted semiconductor optical transmission layer with a band gap greater than that of the first semiconductor optical absorption layer, between the first semiconductor optical absorption layer and an n-type semiconductor electrode layer.