发明名称 |
Method of producing photovoltaic device |
摘要 |
<p>There is disclosed a method of producing a photovoltaic device, characterized in that it includes steps of: a step of forming a zinc oxide layer on a substrate at least by electrolytic deposition; subjecting the zinc oxide layer to any one treatment selected from the group consisting of plasma treatment with a rare gas or nitrogen gas, ion irradiation, light irradiation and electromagnetic irradiation; and forming on the zinc oxide layer a semiconductor layer that are made up of a non-single crystal silicon material containing hydrogen and have at least one p-i-n junction. <IMAGE></p> |
申请公布号 |
EP1463128(A2) |
申请公布日期 |
2004.09.29 |
申请号 |
EP20040007128 |
申请日期 |
2004.03.24 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NAKAMURA, TETSURO;SANO, MASAFUMI |
分类号 |
H01L31/04;C25D9/04;H01L31/052;H01L31/18;(IPC1-7):H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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