发明名称 Method of producing photovoltaic device
摘要 <p>There is disclosed a method of producing a photovoltaic device, characterized in that it includes steps of: a step of forming a zinc oxide layer on a substrate at least by electrolytic deposition; subjecting the zinc oxide layer to any one treatment selected from the group consisting of plasma treatment with a rare gas or nitrogen gas, ion irradiation, light irradiation and electromagnetic irradiation; and forming on the zinc oxide layer a semiconductor layer that are made up of a non-single crystal silicon material containing hydrogen and have at least one p-i-n junction. <IMAGE></p>
申请公布号 EP1463128(A2) 申请公布日期 2004.09.29
申请号 EP20040007128 申请日期 2004.03.24
申请人 CANON KABUSHIKI KAISHA 发明人 NAKAMURA, TETSURO;SANO, MASAFUMI
分类号 H01L31/04;C25D9/04;H01L31/052;H01L31/18;(IPC1-7):H01L31/18 主分类号 H01L31/04
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