| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which the dimension of an opening of a three-layer resist is accurately controlled and the dimension of the opening of each layer is controlled independently. SOLUTION: A first region of electron beam resists 4, 5 and 6 comprising three layers is exposed using an electron beam 7. A second region in the first region which is narrower than the first region is exposed using an electron beam 8, a first opening part 9 is formed in the third electron beam resist 6 by developing the first region, a second opening part 10 is formed in the second electron beam resist 5 by developing the second region, a third opening part 11 is formed in the first electron beam resist 4 by developing the second region, and a recess groove is formed on a semiconductor substrate 21 through the three opening parts 9, 10 and 11. |
