Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same

摘要

A crucible 30 has first member 31 and second cylindrical body 36, and is disposed in a lower chamber 2. The fist member 31 is disposed in the second cylindrical body 36 so as to define a gas flow path formed therebetween as a gap. A pedestal 33 is disposed inside the first member 31. A seed crystal 34 is fixed to the pedestal 33. SiC single crystals are formed on the pedestal 33 by introducing a mixture gas through an inlet conduit 50. During growth of the SiC single crystals, conductance in introduction of the mixture gas into the crucible 30 is larger than that in exhaust of the mixture gas, so that pressure of the mixture gas in the crucible 30 is larger than that of the mixture gas after exhausted from the crucible 30.