发明名称 |
SEMICONDUCTOR POWER DEVICE METAL STRUCTURE AND METHOD OF FORMATION |
摘要 |
In accordance with one embodiment, a stress buffer ( 40 ) is formed between a power metal structure ( 90 ) and passivation layer ( 30 ). The stress buffer ( 40 ) reduces the effects of stress imparted upon the passivation layer ( 30 ) by the power metal structure ( 90 ). In accordance with an alternative embodiment, a power metal structure ( 130 A) is partitioned into segments ( 1091 ), whereby electrical continuity is maintained between the segments ( 1090 ) by remaining portions of a seed layer ( 1052 ) and adhesion/barrier layer ( 1050 ). The individual segments ( 1090 ) impart a lower peak stress than a comparably sized continuous power metal structure ( 9 ). |
申请公布号 |
EP1461830(A2) |
申请公布日期 |
2004.09.29 |
申请号 |
EP20020789631 |
申请日期 |
2002.11.13 |
申请人 |
MOTOROLA, INC. |
发明人 |
MERCADO, LEI, L.;SARIHAN, VIJAY;CHUNG, YOUNG, SIR;WANG, JAMES, JEN-HO;PRACK, EDWARD, R. |
分类号 |
H01L21/60;H01L21/768;H01L23/31;H01L23/485;H01L23/532 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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