发明名称 |
Method of fabricating a capacitor of a semiconductor device |
摘要 |
A method of fabricating a capacitor of a semiconductor device, includes forming a lower electrode on a semiconductor substrate, sequentially forming an aluminum oxide layer and a titanium oxide layer on the lower electrode, and forming an upper electrode on the titanium oxide layer, wherein the upper electrode crosses over the lower electrode. The titanium oxide layer is formed to have a thickness in a range of from about 2 Å to about 50 Å, and the upper electrode is formed at a temperature in a range of from about 150° C. to about 630° C. The temperature at which the upper electrode is formed is decreased as the thickness of the titanium oxide layer is increased to produce a capacitor of a semiconductor device having a minimized leakage current characteristic.
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申请公布号 |
US6797561(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20030406201 |
申请日期 |
2003.04.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO CHANG HYUN;YOU YOUNG SUB;LEE JAI DONG;HWANG KI HYUN |
分类号 |
H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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