发明名称 |
Apparatus and method for monitoring plasma processing apparatus |
摘要 |
The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.
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申请公布号 |
US6796269(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20020229027 |
申请日期 |
2002.08.28 |
申请人 |
HITCHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
SASAKI ICHIRO;MASUDA TOSHIO;FURUSE MUNEO;YAMAMOTO HIDEYUKI |
分类号 |
H01L21/3065;H01J37/32;H01L21/66;(IPC1-7):C23C16/509 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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