发明名称 Etchant composition for molybdenum and method of using same
摘要 An etchant composition for molybdenum includes: 5 to 20% by weight of hydrogen peroxide (H2O2); 75 to 94% by weight of water; and an additive including a pH controlling agent. The etching composition is particularly useful for the fabrication of semiconductor devices. Molybdenum may be etched from a substrate by applying the etchant composition, preferably by spraying or immersion, and preferably at a temperature range of 30° C. to 45° C.
申请公布号 US6797621(B2) 申请公布日期 2004.09.28
申请号 US20010801804 申请日期 2001.03.09
申请人 LG.PHILIPS LCD CO., LTD.;DONGWOO FINE CHEM CO LTD 发明人 SONG HYUNG-SOO;KIM KY-SUB;PARK MIN-CHOON;LEE SOK-JOO
分类号 C23F1/26;(IPC1-7):H01L21/302 主分类号 C23F1/26
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