发明名称 |
Etchant composition for molybdenum and method of using same |
摘要 |
An etchant composition for molybdenum includes: 5 to 20% by weight of hydrogen peroxide (H2O2); 75 to 94% by weight of water; and an additive including a pH controlling agent. The etching composition is particularly useful for the fabrication of semiconductor devices. Molybdenum may be etched from a substrate by applying the etchant composition, preferably by spraying or immersion, and preferably at a temperature range of 30° C. to 45° C.
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申请公布号 |
US6797621(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20010801804 |
申请日期 |
2001.03.09 |
申请人 |
LG.PHILIPS LCD CO., LTD.;DONGWOO FINE CHEM CO LTD |
发明人 |
SONG HYUNG-SOO;KIM KY-SUB;PARK MIN-CHOON;LEE SOK-JOO |
分类号 |
C23F1/26;(IPC1-7):H01L21/302 |
主分类号 |
C23F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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