Semiconductor memory cell and semiconductor component as well as manufacturing methods therefore

摘要

A semiconductor memory cell with a storage transistor, a selection transistor and a layer structure is provided. The layer structure is formed of at least two semiconductor layers separated from one another by a dielectric. A control electrode that controls a current flow through the layer structure is arranged at at least one end face of the layer structure. The layer structure forms what is referred to as a PLED device.